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1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1770
SWITCHING
DUAL P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G14055EJ1V0DS00 (1st edition)
November 1999 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA1770 is a P-channel MOS Field Effect
Transistor designed for power management
applications of portable machines.
FEATURES
Dual chip type
Low on-resistance
R
DS(on)1
= 37 m
MAX. (V
GS
= –4.5 V, I
D
= –3.0
A)
R
DS(on)2
= 39 m
MAX. (V
GS
= –4.0 V, I
D
= –3.0
A)
R
DS(on)3
= 59 m
MAX. (V
GS
= –2.5 V, I
D
= –3.0
A)
Low input capacitance
C
iss
= 1300 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage
V
DSS
–20
V
Gate to Source Voltage
V
GSS
!
12
!
6.0
!
24
0.40
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (1 unit)
Note2
Total Power Dissipation (2 unit)
Note2
Total Power Dissipation (1 unit)
Note3
Total Power Dissipation (2 unit)
Note3
I
D(DC)
A
I
D(pulse)
A
P
T
W
P
T
0.75
W
P
T
1.7
W
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1
%
2.
Mounted on FR4 Board of 1600
mm
2
x 1.6
mm, Drain Pad size : 4.5
mm
2
x 35
μ
m, T
A
= 25°C
3.
Mounted on ceramic substrate of 1200
mm
2
x 2.2
mm, T
A
= 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1770G
Power SOP8
#
#
#