參數(shù)資料
型號(hào): UPA1792G
廠商: NEC Corp.
英文描述: SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)N溝道和P溝道功率場(chǎng)效應(yīng)晶體管工業(yè)用
文件頁數(shù): 10/12頁
文件大小: 104K
代理商: UPA1792G
Data Sheet G14557EJ1V0DS00
10
μ
PA1792
B) P-Channel
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
T
ch
- Channel Temperature - C
R
D
0
50
20
0
50
100
150
40
80
60
V
GS
=
4.0 V
4.5 V
10 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
F
0.01
0.1
0
1
10
100
0.2
1.0
1.2
Pulsed
0.4
0.6
0.8
1.4
V
GS
= 0 V
V
GS
=
4.5 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
10
0.1
100
1000
10000
1
10
100
V
= 0 V
f = 1 MHz
C
oss
C
iss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
0.1
10000
1000
100
10
1
1
10
100
V
DS
=
15
V
V
GS
=
10
V
R
G
=
10
t
d(on)
t
d(off)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
r
0.1
1
10
100
1000
100
10
1
di/dt
=
100
A/
μ
s
V
GS
=
0 V
V
G
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
Q
G
- Gate Charge - nC
V
D
0
10
20
12
10
8
6
4
2
0
I
D
=
5.8 A
5
15
5
0
10
15
25
20
V
GS
V
DS
V
DD
=
24
V
15
V
6
V
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