參數(shù)資料
型號(hào): UPA1813
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān)
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 66K
代理商: UPA1813
Data Sheet D13294EJ1V0DS00
2
μ
PA1813
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –12
V, V
GS
= 0
V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±10
V, V
DS
= 0
V
±10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10
V, I
D
= –1 mA
–0.5
–0.92
–1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –2.5
A
1
13
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –4.5
V, I
D
= –2.5
A
19
25
m
R
DS(on)2
V
GS
= –4.0V, I
D
= –2.5
A
21
30
m
R
DS(on)3
V
GS
= –2.5
V, I
D
= –2.5
A
28
40
m
Input Capacitance
C
iss
V
DS
= –10
V
1130
pF
Output Capacitance
C
oss
V
GS
= 0
V
1045
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
350
pF
Turn-on Delay Time
t
d(on)
V
DD
= –10
V
29
ns
Rise Time
t
r
I
D
= –2.5
A
180
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= –4.0
V
665
ns
Fall Time
t
f
R
G
= 10
1255
ns
Total Gate Charge
Q
G
V
DS
= –10
V
24
nC
Gate to Source Charge
Q
GS
I
D
= –5.0
A
5.1
nC
Gate to Drain Charge
Q
GD
V
GS
= –4.0 V
10
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 5.0
A, V
GS
= 0
V
0.77
V
Reverse Recovery Time
t
rr
45
ns
Reverse Recovery Charge
Q
rr
I
F
= 5.0 A, V
GS
= 0 V
di/dt = 10 A/
μ
s
6.2
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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