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參數(shù)資料
| 型號： | UPA1813GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應晶體管開關(guān) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | UPA1813GR-9JG |
Data Sheet D13294EJ1V0DS00
3
μ
PA1813
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW
=
1ms
10
ms
100ms
DC
R
=
(@V
GS
45
V
I
D
(pulse)
I
D
(DC)
T
A
= 25
C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0.8
1.0
0.4
0.6
5
15
20
10
0
4.0 V
2.5 V
V
GS
=
4.5
V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0
1.0
2.0
3.0
V
DS
=
10 V
T
A
= 125C
75C
T
A
= 25C
25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10
V
I
D
=
1
mA
50
0
150
50
0.5
100
1.0
1.5
1
10
0.01
0.01
0.1
1
10
100
0.1
V
DS
=
10
V
100
I
D
- Drain Current - A
|
f
|
T
A
=
25
C
25C
75C
125C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
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