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參數(shù)資料
| 型號(hào)： | UPA1815 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1815 |
Data Sheet D13805EJ2V0DS00
3
μ
PA1815
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
30
60
90
120
150
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
d
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW
=
1ms
10
ms
100ms
DC
R
=
(@V
GS
45
V
I
D
(pulse)
I
D
(DC)
T
A
= 25 C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.0
0.8
0.4
0.2
0.6
10
0
20
30
2.5 V
V
GS
=
4.5 V
4.0 V
3.3 V
0.01
0.001
0.0001
0.00001
0.5
0
1.0
1.5
2.0
100
10
1
0.1
25C
T
A
= 175C
V
GS
- Gate to Sorce Voltage - V
25C
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10 V
I
D
=
1 mA
50
50
100
0
150
1.0
1.2
0.8
0.6
0.4
1
10
100
0.1
V
DS
=
10V
T
A
=
25
C
25
C
I
D
- Drain Current - A
|
f
|
1
0.01
0.01
100
75
C
125
C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
#
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