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參數(shù)資料
| 型號(hào)： | UPA1816GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 76K |
| 代理商： | UPA1816GR-9JG |
Data Sheet G16252EJ1V0DS
4
μ
PA1816
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
-10
-20
-30
-40
0
-0.2
-0.4
-0.6
-0.8
-1
Pulsed
2.5 V
V
GS
=
4.5 V
4.0 V
1.8 V
V
DS
- Drain to Source Voltage - V
I
D
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0
-0.5
-1
-1.5
-2
V
DS
=
10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
-0.4
-0.6
-0.8
-1
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
-0.01
-0.1
-1
-10
-100
V
DS
=
10 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
10
20
30
40
-50
0
50
100
150
Pulsed
V
GS
=
4.0 V, I
D
=
4.5 A
V
GS
=
4.5 V, I
D
=
4.5 A
V
GS
=
2.5 V, I
D
=
4.5 A
V
GS
=
1.8 V, I
D
=
1.5 A
T
ch
- Channel Temperature -
°
C
R
D
0
10
20
30
40
0
-2
-4
-6
-8
Pulsed
I
D
=
4.5 A
V
GS
- Gate to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1817 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1817GR-9JG | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1817GR-9JG-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1817GR-9JG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 12A 8-Pin Power TSSOP T/R Cut Tape |
| UPA1817GR-9JG-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
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