參數(shù)資料
型號： UPA1873
廠商： NEC Corp.
英文描述： N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述： N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù)： 1/8頁
文件大?。?/td> 67K
代理商： UPA1873
2001
MOS FIELD EFFECT TRANSISTOR
μ
PA1873
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
G15629EJ1V0DS00 (1st edition)
December 2001 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
μ
PA1873 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 23.0 m
MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 24.0 m
MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
R
DS(on)3
= 28.0 m
MAX. (V
GS
= 3.1 V, I
D
= 3.0 A)
R
DS(on)4
= 29.0 m
MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1873GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±12
V
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (2 unit)
Note2
I
D(DC)
±6.0
A
I
D(pulse)
±80
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.25
0.5
0.6
+0.15
3
°
+5
°
–3
°
1.2 MAX.
1.0±0.05
0.1±0.05
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA1873GR-9JG 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1874 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA1874 Data Sheet | Data Sheet[12/2001]
UPA1874B 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1874BGR-9JG 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1874BGR-9JG-E1-A 制造商:Renesas Electronics Corporation 功能描述:RENUPA1874BGR-9JG-E1-A MOS FIELD EFFECT 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 8A 8-PIN POWER TSSOP T/R - Tape and Reel
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