參數(shù)資料
型號: UPA2791GR-E1-AT
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道和P溝道功率場效應(yīng)晶體管
文件頁數(shù): 5/12頁
文件大?。?/td> 245K
代理商: UPA2791GR-E1-AT
Data Sheet G18207EJ2V0DS
5
μ
PA2791GR
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
(1) N-channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100
120
0
20
40
60
80
100 120 140 160
T
A
- Ambient Temperature -
°
C
T
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100 120 140 160
Mounted on ceramic
substrate of
2000 mm
2
x 1.6 mmt
2 units
1 unit
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
D
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I
D(pulse)
I
D(DC)
T
A
= 25
°
C
Single pulse
R
DSon
Lm0V)
(V
GS
=1
PW=200
μ
s
1
0m
i
s
i
s
1
00m
i
s
Mounted on ceramic substrate of
2000 mm
2
x 1.6 mmt, 1 unit
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
t
°
C
0.1
1
10
100
1000
Mounted on ceramic substrate of 2000 mm
2
x 1.6 mmt, 1 unit
T
A
= 25
°
C
Single pulse
R
th(ch-A)
= 73.5°C/W
i
PW - Pulse Width – s
100
μ
1 m 10 m 100 m 1 10 100 1000
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