參數(shù)資料
型號(hào)： UPA2791GR-E2-AT
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
中文描述： MOS場(chǎng)效應(yīng)晶體管的開關(guān)N溝道和P溝道功率場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 2/12頁
文件大?。?/td> 245K
代理商： UPA2791GR-E2-AT
Data Sheet G18207EJ2V0DS
2
μ
PA2791GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C. All terminals are connected.)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
m
20
m
5
m
20
V
Drain Current (DC) (T
C
= 25
°
C)
Note2
Drain Current (pulse)
Note1
I
D(DC)
±
5
A
I
D(pulse)
±
20
A
Total Power Dissipation (1 unit)
Note2
P
T1
1.7
W
Total Power Dissipation (2 units)
Note2
P
T2
2.0
W
Channel Temperature
T
ch
150
°
C
Storage Temperature
T
stg
55 to
+
150
°
C
Single Avalanche Current
Note3
I
AS
5
5
A
Single Avalanche Energy
Note3
E
AS
2.5
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 2000 mm
2
x 1.6 mmt
3.
Starting T
ch
= 25
°
C, V
DD
= 1/2 x V
DSS
, R
G
= 25
Ω
, L = 100
μ
H, V
GS
= V
GSS
→
0 V
<R>
<R>
<R>
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