參數(shù)資料
型號(hào)： UPA805
廠商： NEC Corp.
英文描述： MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
中文描述： 微波低噪聲放大器NPN硅外延晶體管，內(nèi)置2個(gè)元素迷你模具
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 57K
代理商： UPA805
μ
PA805T
4
S-PARAMETERS
V
CE
= 3 V, I
C
= 1 mA, Z
O
= 50
f
S11
S21
S12
S22
GHz
0.200
0.200
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
MAG
0.9410
0.9280
0.8670
0.8150
0.7280
0.6700
0.5970
0.5430
0.5040
0.4350
0.3920
0.3560
0.3240
0.3120
0.2450
ANG
–9.3
–17.7
–26.0
–33.6
–41.5
–47.3
–51.7
–56.3
–60.7
–64.4
–69.4
–71.5
–81.1
–76.7
–85.1
MAG
3.3070
3.1860
3.0130
2.8740
2.6360
2.5360
2.3840
2.2170
2.0650
2.0420
1.9690
1.8470
1.7690
1.7240
1.6690
ANG
167.3
156.0
144.9
134.6
124.4
115.5
107.7
100.7
95.0
88.3
82.0
76.6
71.1
68.1
63.2
MAG
0.0330
0.0650
0.0930
0.1160
0.1330
0.1480
0.1710
0.1820
0.1990
0.2040
0.2270
0.2320
0.2420
0.2520
0.2670
ANG
82.8
78.5
71.1
67.0
59.7
59.1
53.6
52.0
49.8
51.6
48.3
50.1
46.4
45.1
45.3
MAG
0.9900
0.9540
0.9250
0.8730
0.8250
0.7920
0.7640
0.7180
0.6810
0.6600
0.6210
0.6040
0.5840
0.5660
0.5410
ANG
–6.8
–13.7
–19.5
–24.9
–29.5
–33.6
–36.6
–39.9
–42.4
–46.9
–50.1
–51.8
–53.6
–57.6
–58.3
V
CE
= 3 V, I
C
= 3 mA, Z
O
= 50
f
S11
S21
S12
S22
GHz
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
MAG
0.8480
0.7640
0.6470
0.5600
0.4650
0.4050
0.3470
0.3040
0.2790
0.2260
0.2090
0.1820
0.1600
0.1650
0.1210
ANG
–15.9
–27.6
–37.3
–44.1
–49.4
–51.9
–53.4
–55.0
–55.7
–53.6
–57.9
–53.8
–67.3
–58.5
–51.3
MAG
7.7420
6.8190
5.8070
5.0060
4.2790
3.8350
3.4290
3.0820
2.7740
2.6370
2.4900
2.2890
2.1710
2.0820
2.0030
ANG
158.5
141.1
127.1
116.0
106.6
98.8
92.4
86.6
82.3
77.1
72.2
67.9
63.7
61.3
57.3
MAG
0.0320
0.0560
0.0770
0.1000
0.1110
0.1250
0.1340
0.1570
0.1840
0.1910
0.2090
0.2260
0.2280
0.2580
0.2670
ANG
79.4
68.2
66.9
64.5
64.1
62.2
62.6
60.9
60.8
57.5
59.4
58.1
53.4
57.0
52.6
MAG
0.9640
0.8730
0.7950
0.7140
0.6540
0.6250
0.5850
0.5530
0.5450
0.5140
0.5020
0.4850
0.4680
0.4650
0.4490
ANG
–11.3
–20.5
–26.1
–30.2
–33.0
–34.4
–36.3
–38.2
–39.3
–42.2
–45.3
–46.1
–47.9
–51.6
–51.4
V
CE
= 3 V, I
C
= 5 mA, Z
O
= 50
f
S11
S21
S12
S22
GHz
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
MAG
0.7750
0.6530
0.5270
0.4470
0.3590
0.3140
0.2790
0.2460
0.2190
0.1780
0.1650
0.1490
0.1370
0.1320
0.1030
ANG
–19.9
–32.4
–39.8
–45.7
–49.6
–50.3
–48.1
–46.9
–46.8
–43.6
–44.7
–37.6
–50.0
–47.6
–33.7
MAG
10.2330
8.4080
6.7610
5.5980
4.6700
4.1180
3.6300
3.2460
2.8850
2.7470
2.5810
2.3820
2.2440
2.1380
2.0440
ANG
153.0
133.2
119.0
108.5
100.0
92.7
87.1
82.1
78.1
73.7
68.8
64.8
61.4
59.0
55.3
MAG
0.0290
0.0560
0.0730
0.0880
0.1110
0.1230
0.1400
0.1540
0.1780
0.1940
0.2010
0.2240
0.2410
0.2530
0.2650
ANG
78.0
66.1
70.0
67.6
66.9
67.5
66.8
64.1
62.0
62.9
62.0
60.1
60.9
57.7
55.3
MAG
0.9310
0.8150
0.7170
0.6390
0.5950
0.5650
0.5450
0.5190
0.5210
0.5000
0.4780
0.4550
0.4710
0.4490
0.4380
ANG
–14.4
–23.3
–27.3
–30.3
–31.2
–32.4
–34.4
–35.9
–37.0
–38.9
–43.1
–43.1
–43.9
–47.9
–47.0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA805T 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
UPA805T-T1 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
UPA806 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
UPA806T 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA806T(6P^MM) 制造商:Renesas Electronics Corporation 功能描述:
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