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參數(shù)資料
| 型號(hào)： | UPA807 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管，內(nèi)置2個(gè)元素的超小型模具 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 56K |
| 代理商： | UPA807 |
μ
PA807T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 7 mA
Note 1
70
140
Gain Bandwidth Product (1)
f
T
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
10
13
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
8.5
12
GHz
Feed-back Capacitance
C
re
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.6
pF
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
7.5
9
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
7
8.5
dB
Noise Figure (1)
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
1.5
2
dB
Noise Figure (2)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.5
2
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 2 V, I
C
= 7 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
≤
350
μ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
KB
Marking
T84
h
FE
Value
70 to 140
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Ambient Temperature T
A
(°C)
T
T
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
Base to Emitter Voltage V
BE
(V)
C
C
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
100
200
0
50
100
150
50
40
30
20
10
0
0.5
1.0
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
V
CE
= 2 V
30 mW
60 mW
2 Elements in Total
Per Element
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
50
20
10
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
Collector Current I
C
(mA)
D
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA807T | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
| UPA807T-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
| UPA809 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA809TF | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA809TF-T1 | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA807T | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
| UPA807T-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA807TT1 | 制造商:NEC/CEL 功能描述:New |
| UPA807T-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 3V 0.01A 6-Pin SOT-363 T/R |
| UPA807T-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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