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參數(shù)資料
| 型號： | UPA809T-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管，內(nèi)置2個元素迷你模具 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 66K |
| 代理商： | UPA809T-T1 |
μ
PA809T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
160
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
4.0
4.5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
9.0
GHz
Feed-back Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
0.75
0.85
pF
Insertion Power Gain (1)
|S
21
|
2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.5
3.5
dB
Insertion Power Gain (2)
|S
21
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
6.5
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.7
2.5
dB
Noise Figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
1.5
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 1 V, I
C
= 3 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
≤
350
μ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
KB
Marking
T88
h
FE
Value
80 to 160
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