參數(shù)資料
型號(hào): UPA809T
廠商: NEC Corp.
英文描述: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
中文描述: 微波低噪聲放大器NPN硅外延晶體管,內(nèi)置2個(gè)元素迷你模具
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 66K
代理商: UPA809T
μ
PA809T
3
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
0
50
Ambient Temperature T
A
(°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
T
T
100
150
100
200
0
1
Collector to Emitter Voltage V
CE
(V)
2
3
4
5
6
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
C
C
10
20
30
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
C
C
1
0.01
0.05
0.1
0.2
0.5
1
2
5
10
20
100
50
0.1
1
0.2
2
20
50
5
0.5
Collector Current I
C
(mA)
D
F
10
100
100
0
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
V
CE
= 1 V
G
T
3
5
7
1
2
10
1
3
5
7
2
10
5
10
0
5
10
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
I
2
|
2
f = 2 GHz
V
CE
= 1 V
2EemensinToa
PerElemen
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