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參數(shù)資料
| 型號(hào)： | UPA809TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 66K |
| 代理商： | UPA809TF-T1 |
μ
PA809T
4
Collector Current l
C
(mA)
1
2
N
NOISE FIGURE vs.
COLLECTOR CURRENT
1
2
3
5
10
3
7
f = 2 GHz
f = 1 GHz
Collector to Base Voltage V
CB
(V)
1
0.5
F
r
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1
5
20
f = 1 MHz
10
1.0
0.1
Frequency f (GHz)
10
20
M
I
2
l
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
0.1
0.5
1
5
V
CE
= 1 V
I
C
= 5 mA
30
Frequency f (GHz)
N
NOISE FIGURE vs.FREQUENCY
0.1
0.5
2
V
CE
= 1 V
I
C
= 5 mA
1.0
1.5
0.5
MAG
IS
21e
l
2
0
2
V
CE
= 1 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA809T | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA809T-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA810 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA810TC-T1 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA810TF-T1 | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA809T-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA80C | 制造商:NEC Electronics Corporation 功能描述:50 mA, 7 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| UPA80C-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA80GR-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA81 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA81C Data Sheet | Data Sheet[02/1982] |
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