參數(shù)資料
型號： UPA810TC
廠商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
中文描述： NPN硅外延晶體管，配有2個2SC5006平引腳6引腳薄型超超級MINIMOLD
文件頁數(shù)： 6/12頁
文件大?。?/td> 53K
代理商： UPA810TC
μ
PA810TC
6
Data Sheet P14550EJ1V0DS00
V
CE
= 3 V, I
C
= 5 mA
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
0.788
0.712
0.649
0.610
0.596
0.582
0.571
0.570
0.568
0.574
0.577
0.579
0.588
0.586
0.596
0.603
0.609
0.615
0.623
0.626
0.633
0.638
0.648
0.654
0.655
0.666
0.669
0.682
0.696
0.715
–51.6
–90.1
–120.7
–144.4
–164.3
179.5
164.9
151.3
139.2
127.9
117.2
106.4
96.9
86.9
77.7
68.5
59.8
50.9
42.4
33.8
25.4
17.4
13.755
10.866
8.673
7.054
5.936
5.078
4.415
3.924
3.531
3.199
2.937
2.708
2.523
2.353
2.210
2.079
1.974
1.872
1.779
1.692
1.621
1.548
1.490
1.431
1.375
1.324
1.280
1.225
1.176
1.128
144.7
119.6
100.1
84.3
70.7
58.8
48.0
37.5
27.5
17.9
8.5
–0.8
–9.8
–18.5
–27.5
–36.1
–44.6
–53.3
–61.8
–70.3
–78.7
–87.2
–95.1
–103.4
–111.0
–119.4
–127.2
–135.5
–143.2
–150.7
0.031
0.064
0.068
0.078
0.082
0.090
0.094
0.098
0.099
0.105
0.113
0.118
0.120
0.127
0.131
0.139
0.148
0.154
0.160
0.169
0.176
0.184
0.192
0.203
0.212
0.223
0.237
0.244
0.250
0.246
52.4
46.6
30.2
18.2
12.2
7.5
–1.4
–6.1
–8.2
–13.6
–18.5
–24.0
–28.6
–32.8
–37.1
–43.3
–47.0
–51.8
–58.6
–63.8
–69.2
–75.2
–80.7
–86.9
–93.4
–99.8
–106.9
–115.0
–123.5
–131.7
0.911
0.739
0.607
0.514
0.442
0.397
0.361
0.335
0.314
0.295
0.280
0.265
0.258
0.246
0.237
0.225
0.219
0.210
0.202
0.196
0.188
0.181
0.176
0.171
0.168
0.164
0.165
0.164
0.161
0.178
–26.2
–46.1
–59.3
–68.4
–76.0
–83.4
–89.4
–95.7
–103.5
–110.0
–117.1
–124.0
–132.1
–140.0
–148.1
–156.5
–166.4
–174.6
175.3
165.5
155.2
144.2
132.7
120.5
108.1
96.2
84.0
73.7
65.2
56.6
9.5
1.5
–6.1
–13.8
–20.8
–28.3
–35.4
–42.9
V
CE
= 3 V, I
C
= 7 mA
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
0.719
0.635
0.579
0.563
0.545
0.538
0.540
0.539
0.543
0.546
0.551
0.554
0.561
0.564
0.575
0.582
0.588
0.594
0.602
0.607
0.616
0.619
0.629
0.633
0.639
0.649
0.659
0.671
0.698
0.717
–60.9
–105.8
–134.7
–158.0
–176.3
169.1
155.1
143.2
132.1
121.6
111.1
101.4
92.5
82.9
74.1
65.2
56.9
48.4
40.2
31.9
23.6
16.0
18.194
13.362
10.199
8.075
6.672
5.657
4.904
4.348
3.880
3.520
3.225
2.972
2.759
2.577
2.415
2.267
2.155
2.024
1.940
1.838
1.762
1.681
1.616
1.551
1.488
1.434
1.380
1.315
1.262
1.217
138.9
112.4
94.0
79.1
66.7
55.5
44.9
35.3
25.6
16.5
7.3
–1.7
–10.2
–18.8
–27.7
–36.4
–44.4
–53.2
–61.3
–69.7
–77.8
–86.2
–94.2
–102.3
–110.1
–118.6
–126.1
–134.1
–141.5
–148.4
0.045
0.051
0.062
0.068
0.074
0.077
0.081
0.087
0.097
0.105
0.110
0.119
0.123
0.132
0.139
0.148
0.159
0.164
0.174
0.182
0.188
0.200
0.207
0.221
0.230
0.242
0.255
0.255
0.255
0.243
46.4
45.0
30.2
23.4
18.5
13.1
9.9
3.7
–2.0
–5.3
–10.2
–15.8
–20.9
–26.3
–31.9
–37.4
–43.3
–48.3
–55.2
–60.5
–67.2
–73.3
–79.5
–86.2
–93.3
–99.8
–108.1
–116.9
–126.0
–132.8
0.866
0.637
0.504
0.414
0.342
0.312
0.279
0.254
0.235
0.220
0.207
0.195
0.184
0.171
0.163
0.154
0.145
0.139
0.134
0.125
0.117
0.111
0.110
0.107
0.105
0.109
0.105
0.105
0.111
0.137
–32.7
–52.7
–65.7
–74.9
–81.1
–87.7
–93.2
–99.6
–106.7
–113.3
–121.0
–127.3
–136.1
–144.6
–153.3
–163.5
–171.9
178.9
166.8
155.6
145.2
129.8
115.2
100.7
86.1
73.3
59.7
52.2
46.6
40.2
8.2
0.4
–7.0
–13.9
–21.1
–27.8
–35.2
–43.2
相關(guān)PDF資料
PDF描述
UPA810TF NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA812 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
UPA812TFB TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
UPA812TFB-T1 TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
UPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA810TC-T1 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 12V 0.1A 6-Pin Case TC T/R
UPA810TF 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA810TF-T1 制造商:NEC 制造商全稱:NEC 功能描述:BJT
UPA810T-T1 功能描述:TRANS NPN HF FT=4.5GHZ SOT-363 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
UPA810T-T1-A 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*