參數(shù)資料
型號(hào)： UPA822TF
廠商： NEC Corp.
英文描述： NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： NPN硅高頻晶體管
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 15K
代理商： UPA822TF
UPA822TF
NPN SILICON HIGH
FREQUENCY TRANSISTOR
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
HIGH COLLECTOR CURRENT:
I
C
MAX = 65 mA
DESCRIPTION
The UPA822TF contains two NE681 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applications where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
PT
Total Power Dissipation
1 Die
2 Die
T
J
Junction Temperature
T
STG
Storage Temperature
UNITS
V
V
V
mA
RATINGS
20
10
1.5
65
mW
mW
°
C
°
C
110
200
150
-65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
Notes: 1.Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA822TF-T1, 3K per reel.
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio:
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
UPA822TF
TS06
TYP
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
h
FE1
/h
FE2
UNITS
μ
A
μ
A
MIN
MAX
0.8
0.8
240
70
4.5
100
7.0
GHz
pF
dB
dB
0.9
10
12
1.4
1.7
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
(Top View)
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.22
(All Leads)
+0.10
0.45
Q1
Q2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
California Eastern Laboratories
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA822TF-T1 制造商:NEC 制造商全稱:NEC 功能描述:BJT
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UPA826TF 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR
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