參數(shù)資料
型號: UPA826TF-T1
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述: NPN硅外延雙晶體管
文件頁數(shù): 3/12頁
文件大?。?/td> 66K
代理商: UPA826TF-T1
Data Sheet P14553EJ1V0DS00
3
μ
PA826TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
C
C
DC Base Voltage V
BE
(V)
T
T
Ambient Temperature T
A
(
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
D
F
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
S
2
2
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
0
10
20
30
40
50
0
0.5
1.0
10
100
1 000
0.1
1
10
100
2.00
4.00
6.00
8.00
10.00
12.00
1
10
100
0
100
180
230
0
50
100
150
0
4
8
12
16
20
0
1
2
3
4
5
6
8.00
10.00
12.00
14.00
16.00
18.00
1
10
100
V
CE
= 3 V
200
2 Elements in total
Free Air
Per
Element
I
B
= 160 A
I
B
= 140 A
I
B
= 120 A
I
B
= 100 A
I
B
= 80 A
I
B
= 60 A
I
B
= 40 A
I
B
= 20 A
V
CE
= 3 V
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
f = 2 GHz
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