參數(shù)資料
型號(hào)： UPA826TF
廠(chǎng)商： NEC Corp.
英文描述： NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述： NPN硅外延雙晶體管
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 66K
代理商： UPA826TF
Data Sheet P14553EJ1V0DS00
2
μ
PA826TC
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 7 mA
Note 1
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
10.0
12.0
GHz
Feedback Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
1.5
2.5
dB
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
Capacitance between collector and base measured with a capacitance meter (auto
balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
2.
h
FE
CLASSIFICATION
Rank
KB
Marking
83
h
FE
Value
75 to 150
相關(guān)PDF資料
PDF描述
UPA826TF-T1 NPN SILICON EPITAXIAL TWIN TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA826TF-T1 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA827 制造商:NEC 制造商全稱(chēng):NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA827TF 制造商:NEC 制造商全稱(chēng):NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA827TF-T1 制造商:NEC 制造商全稱(chēng):NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA827TF-T1-A 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR
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