參數(shù)資料
型號： UPA827
廠商： NEC Corp.
英文描述： HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
中文描述： 高頻低噪聲放大器NPN硅外延雙晶體管，配有6引腳2 × 2SC5179薄型小微型模具
文件頁數(shù)： 2/16頁
文件大?。?/td> 80K
代理商： UPA827
P
PA827TF
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
P
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
P
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 7 mA
Note 1
70
140
Gain Bandwidth Product (1)
f
T
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
10
13
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
8.5
12
GHz
Feedback Capacitance
C
re
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.6
pF
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
7.5
9
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
7
8.5
dB
Noise Figure (1)
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
1.5
2
dB
Noise Figure (2)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.5
2
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 2 V, I
C
= 7 mA
h
FE
1 = Smaller h
FE
value among Q1 and Q2
h
FE
2 = Larger h
FE
value among Q1 and Q2
0.85
Notes 1.
Pulse measurement P
W
d
350
P
s, Duty cycle
d
2%
Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
2.
h
FE
CLASSIFICATION
Rank
FB
Marking
R84
h
FE
value
70 to 140
相關PDF資料
PDF描述
UPA827TF-T1 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA828 HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA828TF-T1 HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
相關代理商/技術參數(shù)
參數(shù)描述
UPA827TF 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA827TF-T1 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA827TF-T1-A 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA828 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA828TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete
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