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參數(shù)資料
| 型號： | UPC8152TA-E3 |
| 廠商： | NEC Corp. |
| 英文描述： | SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES |
| 中文描述： | 硅單片低電流為蜂窩/無繩電話功放 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 138K |
| 代理商： | UPC8152TA-E3 |
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
BIPOLAR ANALOG INTEGRATED CIRCUITS
P
PC8128TA,
P
PC8151TA,
P
PC8152TA
SILICON MMIC LOW CURRENT AMPLIFIERS
FOR CELLULAR/CORDLESS TELEPHONES
Document No. P14637EJ1V0DS00 (1st edition)
Date Published April 2000 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
2000
DESCRIPTION
The
P
PC8128TA,
P
PC8151TA and
P
PC8152TA are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip
inductor (example: 1005 size) which can not be realized on internal 50
:
wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz f
T
NESAT III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
Low current consumption
:
P
PC8128TA
P
PC8151TA
P
PC8152TA
: V
CC
= 2.4 to 3.3 V
:
P
PC8128TA
P
PC8151TA
P
PC8152TA
:
P
PC8128TA, 8151TA ; G
P
= 12.5 dB TYP. @ f = 1 GHz
P
PC8152TA
; G
P
= 23.0 dB TYP. @ f = 1 GHz
: 100 to 1 900 MHz (Output port LC matching)
:
P
PC8128TA
; ISL = 39 dB TYP. @ f = 1 GHz
:
P
PC8151TA
; ISL = 38 dB TYP. @ f = 1 GHz
:
P
PC8152TA
; ISL = 40 dB TYP. @ f = 1 GHz
; I
CC
= 2.8 mA TYP. @ V
CC
= 3.0 V
; I
CC
= 4.2 mA TYP. @ V
CC
= 3.0 V
; I
CC
= 5.6 mA TYP. @ V
CC
= 3.0 V
Supply voltage
High efficiency
; P
O (1 dB)
=
e
4.0 dBm TYP. @ f = 1 GHz
; P
O (1 dB)
= +2.5 dBm TYP. @ f = 1 GHz
; P
O (1 dB)
=
e
4.5 dBm TYP. @ f = 1 GHz
Power gain variation
Operating frequency
Excellent isolation
APPLICATION
Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPC8152TB | 制造商:NEC 制造商全稱:NEC 功能描述:SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC8152TB-E3 | 功能描述:射頻放大器 Low Current Amplifer RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| UPC8158 | 制造商:NEC 制造商全稱:NEC 功能描述:RF UP-CONVERTER WITH AGC FUNCTION + IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS |
| UPC8158K | 制造商:NEC 制造商全稱:NEC 功能描述:UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS |
| UPC8158K_01 | 制造商:NEC 制造商全稱:NEC 功能描述:AGC/UP-CONVERTER WITH IQ MODULATOR |
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