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參數(shù)資料
| 型號： | UPC8182TB |
| 廠商： | NEC Corp. |
| 英文描述： | 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS |
| 中文描述： | 3伏，2.9千兆赫硅MMIC中功率放大器輸出功率移動通信 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 404K |
| 代理商： | UPC8182TB |
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC8182TB
3 V, 2.9 GHz SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The
μ
PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC
operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
This IC is manufactured using our 30 GHz f
max
UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
Supply voltage: V
CC
= 2.7 to 3.3 V
Circuit current: I
CC
= 30 mA TYP. @ V
CC
= 3.0 V
Medium output power: P
O (1dB)
= +9.5 dBm TYP. @ f = 0.9 GHz
P
O (1dB)
= +9.0 dBm TYP. @ f = 1.9 GHz
P
O (1dB)
= +8.0 dBm TYP. @ f = 2.4 GHz
Power gain: G
P
= 21.5 dB TYP. @ f = 0.9 GHz
G
P
= 20.5 dB TYP. @ f = 1.9 GHz
G
P
= 20.5 dB TYP. @ f = 2.4 GHz
Upper limit operating frequency: f
u
= 2.9 GHz TYP. @ 3 dB bandwidth
High-density surface mounting: 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICAION
Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system
ORDERING INFORMATION (Solder Contains Lead)
Part Number
Package
Marking
Supplying Form
μ
PC8182TB-E3
6-pin super minimold
C3F
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark
To order evaluation samples, contact you’re nearby sales office. Part number for sample order:
μ
PC8182TB
ORDERING INFORMATION (Pb-Free)
Part Number
Package
Marking
Supplying Form
μ
PC8182TB-E3-AZ*
6-pin super minimold
C3F
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
*NOTE:
Please refer to the last page of this data sheet, “Compliance with EU Directives” for Pb-Free RoHS
Compliance Information.
Document No. PU10206EJ01V0DS (1st edition)
(Previous No. P14543EJ2V0DS00)
Date Published December 2002 CP (K)
NEC Compound Semiconductor Devices 1999,
2002
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPC8182TB_1 | 制造商:NEC 制造商全稱:NEC 功能描述:3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC8182TB-A | 功能描述:射頻放大器 3V Med Pwr Amplifier RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| UPC8182TB-E3 | 制造商:California Eastern Laboratories (CEL) 功能描述:RF Amp Chip Single GP 2.9GHz 3.3V 6-Pin SOT-363 T/R |
| UPC8182TB-E3-A | 功能描述:射頻放大器 3V Med Pwr Amplifier RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| UPC8182TB-E3-AZ | 制造商:NEC 制造商全稱:NEC 功能描述:3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS |
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