參數(shù)資料
型號: UPD44164185F5-E50-EQ1
廠商: NEC Corp.
英文描述: 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
中文描述: 1800萬位條DDRII SRAM的分離I / O 2字爆發(fā)運(yùn)作
文件頁數(shù): 16/32頁
文件大小: 375K
代理商: UPD44164185F5-E50-EQ1
16
Data Sheet M15823EJ7V
1
DS
μ
PD44164085, 44164185, 44164365
Read and Write Timing
K
Address
Data in
/K
2
4
6
8
1
3
5
7
TKH/KH
C
/C
TKHCH
NOP
READ
(burst of 2)
WRITE
(burst of 2)
TKHKL
TKLKH
Q01
Q11
Data out
Q02
Q12
/LD
R, /W
TKHCH
TKHKL
TKLKH
TKH/KH
T/KHKH
TCHQX1
TCHQX
TCHQZ
D21
D31
D22
D32
TDVKH
TKHDX
TDVKH
TKHDX
TKHKH
TIVKH
TKHIX
TAVKH TKHAX
CQ
/CQ
TCQHQV
TCHQV
TCHCQX
TCHCQV
TCHCQX
TCHCQV
READ
(burst of 2)
READ
(burst of 2)
NOP
Qx2
Q41
Q42
TCHQX
TCHQV
WRITE
(burst of 2)
A0
A1
A2
A3
A4
T/KHKH
TKHKH
Remarks 1.
Q01 refers to output from address A0+0.
Q02 refers to output from the next internal burst address following A0, i.e., A0+1.
2.
Outputs are disable (high impedance) one clock cycle after a NOP.
3.
In this example, if address A3=A4, data Q41=D31, Q42=D32.
Write data is forwarded immediately as read results.
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