參數(shù)資料
型號(hào)： UPD442012AGY-DD12X-MJH
廠商： NEC Corp.
英文描述： 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述： 200萬(wàn)位CMOS靜態(tài)RAM 128K的字由16位溫度范圍
文件頁(yè)數(shù)： 8/24頁(yè)
文件大?。?/td> 148K
代理商： UPD442012AGY-DD12X-MJH
Data Sheet M14671EJ7V0DS
8
μ
PD442012A-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (2/2)
Parameter
Symbol
Test condition
μ
PD442012A-BCxxX
μ
PD442012A-DDxxX
Unit
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–1.0
+1.0
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
, /CE1 = V
IH
or
–1.0
+1.0
–1.0
+1.0
μ
A
CE2 = V
IL
or /WE = V
IL
or /OE = V
IH
Operating supply current
I
CCA1
/CE1 = V
IL
, CE2 = V
IH
,
–
30
–
–
mA
I
I/O
= 0 mA,
V
CC
≤
2.7 V
–
25
–
–
Minimum cycle time
V
CC
≤
2.2 V
–
–
–
15
I
CCA2
/CE1 = V
IL
, CE2 = V
IH
,
–
4
–
–
I
I/O
= 0 mA,
V
CC
≤
2.7 V
–
2
–
–
Cycle time =
∞
V
CC
≤
2.2 V
–
–
–
1
I
CCA3
/CE1
≤
0.2 V, CE2
≥
V
CC
– 0.2 V,
–
4
–
–
Cycle time = 1
μ
s, I
I/O
= 0 mA,
V
IL
≤
0.2 V,
V
CC
≤
2.7 V
–
3
–
–
V
IH
≥
V
CC
– 0.2 V
V
CC
≤
2.2 V
–
–
–
3
Standby supply current
I
SB
/CE1 = V
IH
or CE2 = V
IL
or
–
0.6
–
–
mA
/LB = /UB = V
IH
V
CC
≤
2.7 V
–
0.6
–
–
V
CC
≤
2.2 V
–
–
–
0.6
I
SB1
/CE1
≥
V
CC
– 0.2 V,
0.3
4
–
–
μ
A
CE2
≥
V
CC
– 0.2 V
V
CC
≤
2.7 V
0.25
3.5
–
–
V
CC
≤
2.2 V
–
–
0.2
3
I
SB2
CE2
≤
0.2 V
0.3
4
–
–
V
CC
≤
2.7 V
0.25
3.5
–
–
V
CC
≤
2.2 V
–
–
0.2
3
I
SB3
/LB = /UB
≥
V
CC
– 0.2 V,
0.3
4
–
–
/CE1
≤
0.2 V,
V
CC
≤
2.7 V
0.25
3.5
–
–
CE2
≥
V
CC
– 0.2 V
V
CC
≤
2.2 V
–
–
0.2
3
High level output voltage
V
OH
I
OH
= –0.5 mA
2.4
–
V
V
CC
≤
2.7 V
1.8
–
V
CC
≤
2.2 V
–
1.5
Low level output voltage
V
OL
I
OL
= 1.0 mA
0.4
–
V
V
CC
≤
2.7 V
0.4
–
V
CC
≤
2.2 V
–
0.4
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These DC characteristics are in common regardless of product specification.
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