參數(shù)資料
型號(hào)： UPD44325094F5-E40-EQ2
廠商： NEC Corp.
英文描述： 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
中文描述： 36M條位推出QDRII SRAM的4個(gè)字爆發(fā)運(yùn)作
文件頁(yè)數(shù)： 13/36頁(yè)
文件大小： 377K
代理商： UPD44325094F5-E40-EQ2
13
Preliminary Data Sheet
M16784EJ1V0DS
μ
PD44325084, 44325094, 44325184, 44325364
Bus Cycle State Diagram
READ DOUBLE;
R_Count = R_Count+2
WRITE DOUBLE;
W_Count = W_Count+2
Power UP
Always
/R = H
Supply voltage
provided
LOAD NEW
READ ADDRESS;
R_Count = 0;
R_Init = 1
READ PORT NOP
R_Init = 0
/R = L & R_Count = 4
/W = H
WRITE PORT NOP
LOAD NEW
WRITE ADDRESS;
W_Count = 0
Always
/W = L & W_Count = 4
/W = L
R_Init = 0
/R = L
Supply voltage
provided
INCREMENT READ
ADDRESS BY TWO
R_Init = 0
INCREMENT WRITE
ADDRESS BY TWO
W_Count = 2
R_Count = 2
Always
Always
/W = H
& W_Count = 4
/R = H
& R_Count = 4
Remarks 1.
The address is concatenated with two additional internal LSBs to facilitate burst operation.
The address order is always fixed as: xxx...xxx+0, xxx...xxx+1, xxx...xxx+2, xxx...xxx+3.
Bus cycle is terminated at the end of this sequence (burst count = 4).
2.
Read and write state machines can be active simultaneously.
Read and write cannot be simultaneously initiated. Read takes precedence.
3.
State machine control timing is controlled by K.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD44325182BF5-E33-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:
UPD44325182BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, B2 QDRII SRAM - Trays
UPD44325182BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, B2 QDRII SRAM - Trays
UPD44325184BF5-E40-FQ1 制造商:Renesas Electronics Corporation 功能描述:IC SRAM QDRII 36MBIT 165BGA
UPD44325184BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, B2 QDRII SRAM - Trays
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