參數(shù)資料
型號: UPD44325364F5-E50-EQ2
廠商: NEC Corp.
英文描述: 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
中文描述: 36M條位推出QDRII SRAM的4個(gè)字爆發(fā)運(yùn)作
文件頁數(shù): 13/36頁
文件大?。?/td> 377K
代理商: UPD44325364F5-E50-EQ2
13
Preliminary Data Sheet
M16784EJ1V0DS
μ
PD44325084, 44325094, 44325184, 44325364
Bus Cycle State Diagram
READ DOUBLE;
R_Count = R_Count+2
WRITE DOUBLE;
W_Count = W_Count+2
Power UP
Always
/R = H
Supply voltage
provided
LOAD NEW
READ ADDRESS;
R_Count = 0;
R_Init = 1
READ PORT NOP
R_Init = 0
/R = L & R_Count = 4
/W = H
WRITE PORT NOP
LOAD NEW
WRITE ADDRESS;
W_Count = 0
Always
/W = L & W_Count = 4
/W = L
R_Init = 0
/R = L
Supply voltage
provided
INCREMENT READ
ADDRESS BY TWO
R_Init = 0
INCREMENT WRITE
ADDRESS BY TWO
W_Count = 2
R_Count = 2
Always
Always
/W = H
& W_Count = 4
/R = H
& R_Count = 4
Remarks 1.
The address is concatenated with two additional internal LSBs to facilitate burst operation.
The address order is always fixed as: xxx...xxx+0, xxx...xxx+1, xxx...xxx+2, xxx...xxx+3.
Bus cycle is terminated at the end of this sequence (burst count = 4).
2.
Read and write state machines can be active simultaneously.
Read and write cannot be simultaneously initiated. Read takes precedence.
3.
State machine control timing is controlled by K.
相關(guān)PDF資料
PDF描述
UPD44325084F5-E33-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325184F5-E33-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325364F5-E33-EQ2 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD448012GY-B55X-MJH 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD444001LE-12-A 制造商:Renesas Electronics 功能描述:12ns 制造商:Renesas Electronics 功能描述:12ns Cut Tape
UPD444004LE-12-A 制造商:Renesas Electronics Corporation 功能描述:
UPD444008LE-12-A 制造商:Renesas Electronics 功能描述:12ns 5V Cut Tape
UPD444008LLE-A10(A) 制造商:Renesas Electronics Corporation 功能描述:
UPD444008LLE-A12-A 制造商:Renesas Electronics 功能描述:12ns 3.3V Cut Tape