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參數(shù)資料
| 型號： | UPD45128163G5-A10B-9JF |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| 中文描述： | 128兆位同步DRAM 4銀行，LVTTL |
| 文件頁數(shù)： | 1/92頁 |
| 文件大小： | 1107K |
| 代理商： | UPD45128163G5-A10B-9JF |
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1997
MOS INTEGRATED CIRCUIT
μ
PD45128441, 45128841, 45128163
128M-bit Synchronous DRAM
4-bank, LVTTL
DATA SHEET
Document No. M12650EJBV0DS00 (11th edition)
Date Published April 2000 NS CP (K)
Printed in Japan
The mark
shows major revised points.
Description
The
μ
PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access
memories, organized as 8,388,608
×
4
×
4, 4,194,304
×
8
×
4, 2,097,152
×
16
×
4 (word
×
bit
×
bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0(A13) and BA1(A12)
Byte control (
×
16) by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
×
4,
×
8,
×
16 organization
Single 3.3 V
±
0.3 V power supply
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
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| UPD45128163G5-A75 | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128163G5-A75-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128441G5-A10B | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128841G5-A10B | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128441G5-A10B-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
| UPD4528BC | 制造商:Panasonic Industrial Company 功能描述:IC |
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