參數(shù)資料
型號(hào): UPD45128163G5-A80
廠商: NEC Corp.
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL
中文描述: 128兆位同步DRAM 4銀行,LVTTL
文件頁數(shù): 13/92頁
文件大?。?/td> 1107K
代理商: UPD45128163G5-A80
Data Sheet M12650EJBV0DS00
13
μ
PD45128441, 45128841, 45128163
Self refresh entry command
(/CS, /RAS, /CAS, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while
CKE remains low. When CKE goes high, the
μ
PD45128xxx exits the
self refresh mode.
During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Fig.7
Self refresh entry command
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0(A13), BA1(A12)
Burst stop command
(/CS, /WE = Low, /RAS, /CAS = High)
This command can stop the current burst operation.
Fig.8
Burst stop command in Full Page
Mode
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0(A13), BA1(A12)
H
No operation
(/CS = Low, /RAS, /CAS, /WE = High)
This command is not an execution command. No operations begin
or terminate by this command.
Fig.9
No operation
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13), BA1(A12)
相關(guān)PDF資料
PDF描述
UPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163-I-E 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
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