參數(shù)資料
型號(hào): UPD4616112
廠商: NEC Corp.
英文描述: 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
中文描述: 1,600位CMOS移動(dòng)指明內(nèi)存100萬字由16位
文件頁數(shù): 1/32頁
文件大?。?/td> 220K
代理商: UPD4616112
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2000
Document No. M15085EJ5V0DS00 (5th edition)
Date Published October 2001 NS CP (K)
Printed in Japan
MOS INTEGRATED CIRCUIT
μ
PD4616112
16M-BIT CMOS MOBILE SPECIFIED RAM
1M-WORD BY 16-BIT
DATA SHEET
The mark
#
shows major revised points.
#
#
Description
The
μ
PD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified
RAM featuring low power static RAM compatible function and pin configuration.
The
μ
PD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell.
The
μ
PD4616112 is packed in 48-pin TAPE FBGA.
Features
1,048,576 words by 16 bits organization
Fast access time: 80, 90 ns (MAX.)
Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15)
Low voltage operation: V
CC
= 2.6 to 3.0 V
Operating ambient temperature: T
A
= –20 to +70 °C
Output Enable input for easy application
Chip Enable input: /CS pin
Standby Mode input: MODE pin
Standby Mode1: Normal standby (Memory cell data hold valid)
Standby Mode2: Memory cell data hold invalid
Product name
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
Voltage
temperature
At operating
At standby
°C
mA (MAX.)
μ
A (MAX.)
μ
PD4616112-BCxx
80, 90
2.6 to 3.0
–20 to +70
35
100 / 10
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