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參數(shù)資料
| 型號： | UPD780701Y |
| 廠商： | NEC Corp. |
| 元件分類： | 8位微控制器 |
| 英文描述： | 8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash |
| 中文描述： | 8位微控制器與2/4/8K字節(jié)在系統(tǒng)可編程閃存 |
| 文件頁數(shù)： | 18/66頁 |
| 文件大小： | 565K |
| 代理商： | UPD780701Y |
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μ
PD78F0034A, 78F0034AY
18
Data Sheet U14040EJ4V0DS
Table 4-2. Differences Between
μ
PD78F0034AY and Mask ROM Versions
Item
μ
PD78F0034AY
Mask ROM Versions
μ
PD780034AY Subseries
μ
PD780024AY Subseries
Note
Internal ROM structure
Flash memory
Mask ROM
Internal ROM capacity
32 KB
μ
PD780031AY: 8 KB
μ
PD780032AY: 16 KB
μ
PD780033AY: 24 KB
μ
PD780034AY: 32 KB
μ
PD780021AY: 8 KB
μ
PD780022AY: 16 KB
μ
PD780023AY: 24 KB
μ
PD780024AY: 32 KB
Internal high-speed RAM capacity
1,024 bytes
μ
PD780031AY: 512 bytes
μ
PD780032AY: 512 bytes
μ
PD780033AY: 1,024 bytes
μ
PD780034AY: 1,024 bytes
μ
PD780021AY: 512 bytes
μ
PD780022AY: 512 bytes
μ
PD780023AY: 1,024 bytes
μ
PD780024AY: 1,024 bytes
Minimum instruction execution time
Minimum instruction execution time variable function incorporated
When main system clock is selected
0.24
μ
s/0.48
μ
s/0.95
μ
s/1.91
μ
s/3.81
μ
s
(operation at 8.38 MHz, V
DD
= 4.0 to 5.5 V)
When subsystem clock is selected
122
μ
s (32.768 kHz)
Clock output
65.5 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.10 MHz, 4.19 MHz, 8.38 MHz
(operation at 8.38 MHz with main system clock)
32.768 kHz
(operation at 32.768 kHz with subsystem clock)
Buzzer output
1.02 kHz, 2.5 kHz, 4.10 kHz, 8.19 kHz
(operation at 8.38 MHz with main system clock)
A/D converter resolution
10 bits
8 bits
Mask option specification of on-chip
pull-up resistor for pins P30 and P31
Not available
Available
IC pin
Not provided
Provided
V
PP
pin
Provided
Not provided
Electrical specifications,
recommended soldering conditions
Refer to the data sheet of individual products.
Note
The
μ
PD78F0034AY can be used as the flash memory version of the
μ
PD780024AY Subseries.
Caution There are differences in noise immunity and noise radiation between the flash memory and mask
ROM versions. When pre-producing an application set with the flash memory version and then mass
producing it with the mask ROM version, be sure to conduct sufficient evaluations on the
commercial samples (CS) (not engineering samples (ES)) of the mask ROM versions.
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