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參數(shù)資料
| 型號： | UPG138GV-E1 |
| 廠商： | NEC Corp. |
| 元件分類： | 晶體 |
| 英文描述： | CRYSTAL 24.0 MHZ 20PF SMD |
| 中文描述： | L波段單刀雙擲開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | UPG138GV-E1 |
GaAs INTEGRATED CIRCUIT
P
PG138GV
L-BAND SPDT SWITCH
1996
Document No. P13058EJ2V0DS00 (2nd edition)
(Previous No. P11508EJ1V0DS00)
Date Published December 1997 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The
P
PG138GV is L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
mobile communication system.
It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
miniaturizing the system.
FEATURES
Maximum transmission power : +35 dBm min. (@ V
CONT
=
e
5 V/0 V:
P
PG138GV)
+34 dBm typ. (@ V
CONT
=
e
3 V/0 V:
P
PG138GV)
Low insertion loss
: 0.55 dB typ. (@ 1 GHz)
0.65 dB typ. (@ 2 GHz)
APPLICATION
Digital Cellular : GSM, PDC, PCN etc.
PHS Base Station, PCS etc.
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKING FORM
P
PG138GV-E1
8-pin plastic SSOP (175 mil)
Carrier tape width 12 mm Qty 2 kp/Reel.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
PARAMETERS
SYMBOL
RATINGS
UNIT
Control Voltage 1, 2
V
CONT1, 2
e
6.0 to +0.6
V
Input Power (V
CONT
=
e
5 V)
P
in
+36
dBm
Input Power (V
CONT
=
e
3 V)
P
in
+34
dBm
Total Power Dissipation
P
tot
0.7
W
Operating Temperature
T
opt
e
50 to +80
°C
Storage Temperature
T
stg
e
65 to +150
°C
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