- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384047 > US6T4 (Rohm CO.,LTD.) Low frequency amplifier PDF資料下載
參數(shù)資料
| 型號： | US6T4 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency amplifier |
| 中文描述： | 低頻放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 66K |
| 代理商： | US6T4 |
US6T4
Transistors
Low frequency amplifier
Rev.A
1/2
US6T4
z
Application
Low frequency amplifier
Driver
z
Features
1) A collector current
is large.
2) V
CE(sat)
: max.
250mV
At I
C
=
1.5A / I
B
=
30mA
z
Absolute maximum ratings
(Ta=25
°
C)
z
External dimensions
(Unit : mm)
ROHM : TUMT6
0
0
0
0.15Max.
2
1
0
(2)
(5)
(1)
(3)
(6)
(4)
1.7
2.1
0.2
1pin mark
0.2
0
0
Abbreviated symbol : T04
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
3
6
400
1.0
150
55 to
+
150
1
2
Unit
V
V
V
A
A
mW
W
°
C
°
C
3
2 Each Termminal Mounted on a Recommended
3 Mounted on a 25mm
25mm
0.8mm Ceramic substrate.
z
Electrical characteristics
(Ta=25
°
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Single pulse, P
W
1ms
z
Equivalent circuit
(4)
(5)
(6)
(1)
(2)
(3)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
15
12
6
270
Typ.
120
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
280
30
MHz
pF
V
CE
=
2V, I
E
=
500mA, f
=
100MHz
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
1.5A, I
B
=
30mA
V
CE
=
2V, I
C
=
500mA
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| US6T9 | General purpose amplification (−30V, −1A) |
| US6X8 | General purpose amplification (30V, 1A) |
| USB2224 | BUS POWERED USB2.0 FLASH MEDIA CONTROLLER |
| USB2224-NE-02 | BUS POWERED USB2.0 FLASH MEDIA CONTROLLER |
| USB2224-NU-02 | BUS POWERED USB2.0 FLASH MEDIA CONTROLLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| US6T4_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency amplifier |
| US6T4TR | 功能描述:兩極晶體管 - BJT BIPOLAR PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| US6T5 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency amplifier (-30V, -2A) |
| US6T5_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency amplifier (-30V, -2A) |
| US6T5TR | 功能描述:兩極晶體管 - BJT BIPOLAR PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。