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參數(shù)資料
| 型號(hào)： | UT2327 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE |
| 中文描述： | P溝道增強(qiáng)型 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 757K |
| 代理商： | UT2327 |
UT2327
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-108,A
2 of 5
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
, unless otherwise specified)
PARAMETER
SYMBOL
V
DS
V
GS
RATING
- 20
± 12
-2.6
-2.1
-10
1.38
+150
-55 ~ +150
UNITS
V
V
A
A
A
W
Drain-Source Voltage
Gate-Source Voltage
Ta=25
Ta=70
Continuous Drain Current (Note 3)
I
D
Pulsed Drain Current (Note
1, 2)
Total Power Dissipation (Ta=25
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
I
DM
P
D
T
J
T
STG
)
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
MIN
TYP
MAX
90
UNIT
/W
Junction to Ambient (Note
3)
ELECT RICAL CHARACT ERIS T ICS
(T
J
=25
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=-250uA
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±12V
-20
V
uA
uA
nA
V/
T
J
=25
-1
-10
±100
Drain-Source Leakage Current T
J
=70
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
BV
DSS
/
T
J
Reference to 25
ON CHARACTERISTICS
Gate Threshold Voltage
I
DSS
I
GSS
, I
D
=-1mA
-0.1
V
GS(TH)
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-5V, I
D
=-2.8A
V
GS
=-2.8V, I
D
=-2.0A
V
DS
=-5V, I
D
=-2.8A
-0.5
V
m
m
S
130
190
Drain-Source On-State Resistance (Note
2)
R
DS(ON)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note
2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note
2)
Gate-Source Charge
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current (Note
1)
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤
300us, duty cycle
≤
2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270
g
FS
4.4
C
ISS
C
OSS
C
RSS
295
170
65
pF
pF
pF
V
GS
=0V, V
DS
=-6V, f=1.0MHz
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
5.2
9.7
19
29
5.2
1.36
0.6
ns
ns
ns
ns
nC
nC
nC
V
DS
=-15V, V
GS
=-10V,
I
D
=-1A, R
G
=6
, R
D
=15
10
V
DS
=-6V, V
GS
=-5V, I
D
=-2.8A
V
SD
T
J
=25
, I
S
=-1.6A, V
GS
=0V
-1.2
V
I
S
V
D
=V
G
=0V, V
S
=-1.2V
-1
A
I
SM
-10
A
/W when mounted on min.
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相關(guān)代理商/技術(shù)參數(shù) |
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| UT2327-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
| UT2327L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
| UT232A | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:ENHANCED RS-232 LINE DRIVERS/RECEIVERS |
| UT232A_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH PERFORMANCE RS-232 LINE DRIVERS/RECEIVERS |
| UT232AG-D16-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH PERFORMANCE RS-232 LINE DRIVERS/RECEIVERS |
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