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參數(shù)資料
| 型號(hào)： | UT60N03L-TN3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 224K |
| 代理商： | UT60N03L-TN3-R |
UT60N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-237.B
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (VGS=10V)
ID
60
A
45
W
Power Dissipation
Derate above 25°C
PD
0.37
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
2.73
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250A
30
V
Drain-Source Leakage Current
IDSS
VDS=25V, VGS=0V
1
A
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250A
1
3
V
VGS=10V, ID=30A
14
23
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=19A
24
30
m
DYNAMIC PARAMETERS
Input Capacitance
CISS
900
pF
Output Capacitance
COSS
210
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=1MHz
90
pF
SWITCHING PARAMETERS
VGS=4.5V
Turn-ON Time
t(ON)
90
ns
Turn-ON Delay Time
tD(ON)
11
ns
Turn-ON Rise Time
tR
49
ns
Turn-OFF Time
t(OFF)
83
ns
Turn-OFF Delay Time
tD(OFF)
27
ns
Turn-OFF Fall-Time
tF
VDD=15V, ID=7.9A, RL=18
28
ns
VGS=10V
Turn-ON Time
t(ON)
48
ns
Turn-ON Delay Time
tD(ON)
6
ns
Turn-ON Rise Time
tR
26
ns
Turn-OFF Time
t(OFF)
120
ns
Turn-OFF Delay Time
tD(OFF)
52
ns
Turn-OFF Fall-Time
tF
VDD=15V, ID=7.9A, RL=18
28
ns
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