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UTRON
UT61L1024(E)
Rev 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
UTRON TECHNOLOGY INC.
P80040
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
3
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to Vss
VTERM
-0.5 to 4.6
V
Operating Temperature
TA
-20 to 80
J
Storage Temperature
TSTG
-65 to 150
J
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
J
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the
operational
sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect
device reliability.
TRUTH TABLE
MODE
CE
CE2
I/O OPERATION
SUPPLY CURRENT
Standby
H
X
High - Z
ISB,ISB1
Standby
X
L
X
High -Z
ISB,ISB1
Output Disable
L
H
High - Z
ICC
Read
L
H
L
H
DOUT
ICC
Write
L
H
X
L
DIN
ICC
Note:
H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (V
CC = 3.0V
3.6V, TA = -20J
to 80J )
PARAMETER
SYMBOL
TEST CONDITION
MIN.
MAX.
UNIT
Power Voltage
Vcc
3.0
3.6
V
Input High Voltage
VIH
2.0
VCC+0.5
V
Input Low Voltage
VIL
*
- 0.5
0.6
V
Input Leakage Current
ILI
VSS
VIN
VCC
- 1
1
A
Output Leakage Current
ILO
VSS
VI/O
VCC
CE = VIH or CE2 = VIL
or
= VIH or
= VIL
- 1
1
A
Output High Voltage
VOH
IOH = - 4mA
2.2
-
V
Output Low Voltage
VOL
IOL = 8mA
-
0.4
V
- 12
-
100
mA
Operating Power
Supply Current
ICC
Cycle time=Min, II/O = 0mA
. CE = VIL , CE2 = VIH
- 15
-
90
mA
ISB
CE = VIH or CE2 = VIL
-
20
mA
Standby Power
Supply Current
ISB1
CE
VCC-0.2V ;or CE2
0.2V
-
3
mA
Notes:
1. Overshoot : Vcc+3.0v for pulse width less than 8ns.
2. Undershoot : Vss-3.0v for pulse width less than 8ns.
3. Overshoot and Undershoot are sampled, not 100% tested.