- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄225474 > UT61L512 ASYNCHRONOUS STATIC RAM- High Speed PDF資料下載
參數(shù)資料
| 型號(hào)： | UT61L512 |
| 英文描述： | ASYNCHRONOUS STATIC RAM- High Speed |
| 中文描述： | 異步靜態(tài)RAM高速 |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | UT61L512 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)
UTRON
UT61L1024(E)
Rev 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
UTRON TECHNOLOGY INC.
P80040
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
7
Notes :
1. WE , CE must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE , high CE2, low WE .
3. During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to
be placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5. If the CE low transition and CE2 high transition occurs simultaneously with or after WE low transition, the outputs remain in a
high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured 500mV from steady state.
DATA RETENTION CHARACTERISTICS (T
A = -20J
to 80J )
PARAMETER
SYMBOL TEST CONDITION
MIN. MAX. UNIT
Vcc for Data Retention
VDR
CE
VCC-0.2V or CE2
≤ 0.2V
2.0
3.6
V
Data Retention Current
IDR
Vcc=2V
CE
VCC-0.2V or CE2
≤ 0.2V
-
3
mA
Chip Disable to Data
Retention Time
tCDR
See Data Retention Waveforms
0
-
ms
Recovery Time
tR
5
-
ms
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) ( CE controlled)
VDR
2V
CE
VCC-0.2V
Vcc(min.)
VIH
VCC
tR
tCDR
CE
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR
2V
VCC(min.)
VCC
tR
tCDR
CE2
0.2V
VIL
CE2
VCC(min.)
VIL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UT61L5128 | ASYNCHRONOUS STATIC RAM- High Speed |
| UT61L6416 | IC Flash Mem PARL 4.5v To 5.5v 2-MBit 128kx16/256kx8 70ns 48TSOP |
| UT61L6416(E) | ASYNCHRONOUS STATIC RAM- High Speed |
| UT621024(E) | IC 2MEG FLSH(256KX16)BOTTOM SE |
| UT62256C(E) | ASYNCHRONOUS STATIC RAM- High Speed |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UT61L5128 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASYNCHRONOUS STATIC RAM- High Speed |
| UT61L6416 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASYNCHRONOUS STATIC RAM- High Speed |
| UT61L6416(E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASYNCHRONOUS STATIC RAM- High Speed |
| UT621024 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K X 8 BIT LOW POWER CMOS SRAM |
| UT621024(E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ASYNCHRONOUS STATIC RAM- High Speed |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。