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參數(shù)資料
| 型號(hào)： | UZTX796A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | UZTX796A |
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 200 Volt VCEO
* Gain of 250 at IC=0.3 Amps
* Very low saturation voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-200
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-0.5
A
Practical Power Dissipation*
Ptotp
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-200
V
IC=-100A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-200
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100A
Collector Cut-Off Current
ICBO
-0.1
A
VCB=-150V
Emitter Cut-Off Current
IEBO
-0.1
A
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.3
V
IC=-50mA, IB=-2mA*
IC=-100mA, IB=-5mA*
IC=-200mA, IB=-20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.95
V
IC=-200mA, IB=-20mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.67
V
IC=-200mA, VCE=-10V*
Static Forward Current
Transfer Ratio
hFE
300
250
100
800
IC=-10mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-300mA, VCE=-10V*
IC=-400mA, VCE=-10V*
E-Line
TO92 Compatible
ZTX796A
3-288
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Cibo
225
pF
VEB=-0.5V, f=1MHz
Output Capacitance
Cobo
12
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
100
3200
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX796A
-40
0.0001
Derating curve
T -Temperature (°C)
M
ax
Po
we
rD
is
sipat
io
n
-(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
rm
a
lR
esis
ta
nce
(
°C/
W
)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-289
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