參數(shù)資料
型號: V300NH02L
廠商: 意法半導(dǎo)體
英文描述: N-channel 24V - 0.8mOHM - 280A - PowerSO-10 STripFET TM Power MOSFET
中文描述: N溝道24V的- 0.8mOHM - 280A型- PowerSO - 10 STripFET商標(biāo)功率MOSFET
文件頁數(shù): 3/9頁
文件大?。?/td> 304K
代理商: V300NH02L
STV300NH02L
Electrical characteristics
3/9
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 3.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1mA, V
GS
= 0
24
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating, T
c
=125°C
1
10
μA
μA
I
GSS
Gate body leakage
current (V
DS
= 0)
V
DS
= ± 20V
±100
nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250
μ
A
1
1.5
2
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 80A
0.8
1
m
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 80A @100°C
1.1
m
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 15V, f = 1 MHz, V
GS
=0
7055
3251
307
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 12V, I
D
= 120A,
V
GS
= 10V
(see Figure 2)
109.4
30.2
26.4
nC
nC
nC
R
G
Gate input resistance
V
DS
= 0V, f = 1 MHz, V
GS
=0
4.4
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