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參數(shù)資料
| 型號： | V436416S04VCTG-75 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| 中文描述： | 3.3伏16米x 64高性能PC133的無緩沖內(nèi)存模塊 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 278K |
| 代理商： | V436416S04VCTG-75 |
MOSEL VITELIC
V436416S04V(C)TG-75
9
V436416S04V(C)TG-75 Rev. 1.7 September 2001
Notes:
1.
The specified values are valid when addresses are changed no more than once during t
CK
(min.) and when No
Operation commands are registered on every rising clock edge during t
RC
(min). Values are shown per module
bank.
2.
The specified values are valid when data inputs (DQ
’
s) are stable during t
RC
(min.).
3.
All AC characteristics are shown for device level.
An initial pause of 100
μ
s is required after power-up, then a Precharge All Banks command must be given followed
by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin.
4.
AC timing tests have V
IL
= 0.4V and V
IH
= 2.4V with the timing referenced to the 1.4V crossover point. The transition
time is measured between V
IH
and V
IL
. All AC measurements assume t
T
= 1 ns with the AC output load circuit
shown. Specific tac and toh parameters are measured with a 50 pF only, without any resistive termination and with
a input signal of 1V / ns edge rate between 0.8V and 2.0V.
5.
If clock rising time is longer than 1 ns, a time (t
T
/2 -0.5) ns has to be added to this parameter.
6.
Rated at 1.5V
7.
If t
T
is longer than 1 ns, a time (t
T
-1) ns has to be added to this parameter.
8.
Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be
given to
“
wake-up
”
the device.
9.
Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high.
Self Refresh Exit is not complete until a time period equal to t
RC
is satisfied once the Self Refresh Exit command
is registered.
10.
Referenced to the time which the output achieves the open circuit condition, not to output voltage levels.
1.4V
1.4V
tSETUP
tHOLD
tAC
tAC
tLZ
tOH
tHZ
CLOCK
INPUT
OUTPUT
50 pF
I/O
Z=50 Ohm
+ 1.4 V
50 Ohm
2.4V
0.4V
t
T
tCL
tCH
I/O
Measurement conditions for
tac and toh
50 pF
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PDF描述 |
|---|---|
| V436416S04VTG | 3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能無緩沖器PC100和100MHZSDRAM模塊) |
| V436416S04V | 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43644R04VCTG-10PC | 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43644R04VCTG-75 | 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| V43644R04VTG | 3.3 Volt 4M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 4M*64位高性能無緩沖器PC100和100MHZ SDRAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| V43644R04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43644R04VCTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| V43644Y04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43644Y04VCTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
| V43644Y04VTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
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