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參數(shù)資料
| 型號(hào)： | V436416S04VTG |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能無(wú)緩沖器PC100和100MHZSDRAM模塊) |
| 中文描述： | 3.3伏特16米x 64高性能和100兆赫PC100的內(nèi)存模塊，緩沖（3.3 1,600 * 64位高性能無(wú)緩沖器PC100的和100MHZSDRAM模塊） |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | V436416S04VTG |
MOSEL V ITELIC
V436416S04VTG
7
V436416S04VTG Rev. 1.3 February 1999
AC Characteristics
3,4
T
A
= 0
°
to 70
°
C; V
SS
= 0V; V
CC
= 3.3V
±
0.3V, t
T
= 1 ns
#
Symbol
Parameter
Limit Values
Unit
Note
-10PC
-10
-12
Min.
Max.
Min.
Max.
Min.
Max.
Clock and Clock Enable
1
t
CK
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
10
10
10
12
10
15
ns
ns
2
f
CK
System frequency
CAS Latency = 3
CAS Latency = 2
–
–
100
100
–
–
100
100
–
–
83
83
MHz
MHz
3
t
AC
Clock Access Time
CAS Latency = 3
CAS Latency = 2
–
–
6
6
–
–
7
7
–
–
7
8
ns
ns
4,5
4
t
CH
Clock High Pulse Width
3
–
3
–
3
–
ns
6
5
t
CL
Clock Low Pulse Width
3
–
3
–
3
–
ns
6
6
t
CS
Input Setup time
2
–
2
–
2
–
ns
7
7
t
CH
Input Hold Time
1
–
1
–
1
–
ns
7
8
t
CKSP
CKE Setup Time (Power down mode)
2.5
–
2.5
–
3
–
ns
8
9
t
CKSR
CKE Setup Time (Self Refresh Exit)
8
–
8
–
8
–
ns
9
10
t
T
Transition time (rise and fall)
1
–
1
–
1
–
ns
Common Parameters
11
t
RCD
RAS to CAS delay
20
–
24
–
24
–
ns
12
t
RC
Cycle Time
70
120k
73
120k
90
120k
ns
13
t
RAS
Active Command Period
45
–
48
–
60
–
ns
14
t
RP
Precharge Time
20
–
24
–
24
–
ns
15
t
RRD
Bank to Bank Delay Time
16
–
20
–
20
–
ns
16
t
CCD
CAS to CAS delay time
(same bank)
1
–
1
–
1
–
CLK
Refresh Cycle
17
t
SREX
Self Refresh Exit Time
10
–
10
–
10
–
ns
9
18
t
REF
Refresh Period (4096 cycles)
64
–
64
–
64
–
ms
8
Read Cycle
19
t
OH
Data Out Hold Time
3
–
3
–
3
–
ns
4
20
t
LZ
Data Out to Low Impedance Time
0
–
0
–
0
–
ns
21
t
HZ
Data Out to High Impedance Time
3
9
3
9
3
9
ns
10
22
t
DQZ
DQM Data Out Disable Latency
2
–
2
–
2
–
CLK
Write Cycle
23
t
DPL
Data input to Precharge (write recovery)
2
–
2
–
2
–
CLK
24
t
DAL
Data In to Active/refresh
5
–
5
–
5
–
CLK
11
25
t
DQW
DQM Write Mask Latency
0
–
0
–
0
–
CLK
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| V43644Y04VCTG-10PC | 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V43644R04VCTG-10PC | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43644R04VCTG-75 | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| V43644Y04VCTG-10PC | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43644Y04VCTG-75 | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
| V43644Y04VTG-10PC | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
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