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參數(shù)資料
| 型號(hào)： | V43644Y04VCTG-10PC |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| 中文描述： | 3.3伏4米× 64高性能100 MHz的內(nèi)存緩沖的SODIMM |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 131K |
| 代理商： | V43644Y04VCTG-10PC |
4
V43644Y04V(C)TG-10PC Rev. 1.6 October 2000
MOSEL VITELIC
V43644Y04V(C)TG-10PC
Serial Presence Detect Information
A serial presence detect storage device –
E
PROM – is assembled onto the module. Informa-
tion about the module configuration, speed, etc. is
SPD-Table for -10 PC modules:
2
written into the E
duction using a serial presence detect protocol (I
synchronous 2-wire bus)
2
PROM device during module pro-
2
C
Byte
Number
Function Described
SPD Entry Value
Hex Value
100 MHz
-10PC
0
Number of SPD bytes
128
80
1
Total bytes in Serial PD
256
08
2
Memory Type
SDRAM
04
3
Number of Row Addresses (without BS bits)
12
0C
4
Number of Column Addresses (for x16 SDRAM)
8
08
5
Number of DIMM Banks
1
01
6
Module Data Width
64
40
7
Module Data Width (continued)
0
00
8
Module Interface Levels
LVTTL
01
9
SDRAM Cycle Time at CL=3
10.0 ns
A0
10
SDRAM Access Time from Clock at CL=3
6.0 ns
60
11
Dimm Config (Error Det/Corr.)
none
00
12
Refresh Rate/Type
Self-Refresh, 15.6
μ
s
80
13
SDRAM width, Primary
x16
10
14
Error Checking SDRAM Data Width
n/a / x8
00
15
Minimum Clock Delay from Back to Back
Random Column Address
t
ccd
= 1 CLK
01
16
Burst Length Supported
1, 2, 4, 8 & full Page
8F
17
Number of SDRAM Banks
4
04
18
Supported CAS Latencies
CL = 2 & 3
06
19
CS Latencies
CS Latency = 0
01
20
WE Latencies
WL = 0
01
21
SDRAM DIMM Module Attributes
Non Buffered/Non Reg.
00
22
SDRAM Device Attributes: General
Vcc tol
±
10%
0E
23
Minimum Clock Cycle Time at CAS Latency = 2
10.0 ns
A0
24
Maximum Data Access Time from Clock for CL = 2
6.0 ns
60
25
Minimum Clock Cycle Time at CL = 1
Not Supported
00
26
Maximum Data Access Time from Clock at CL = 1
Not Supported
00
27
Minimum Row Precharge Time t
RP
20 ns
14
28
Minimum Row Active to Row Active Delay t
RRD
16 ns
10
29
Minimum RAS to CAS Delay t
RCD
20 ns
14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V43644Y04VCTG-75 | 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
| V43644Y04VTG-10PC | 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43644YO4VTG | 3.3 Volt 4M x 64 High Performance 100 MHZ SDRAM Module with Unbuffered(3.3V 4M*64位高性能無緩沖器100MHZ SDRAM模塊) |
| V43648S04VCTG-10PC | 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43648S04VCTG-75 | 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V43644Y04VCTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
| V43644Y04VTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43648S04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43648S04VCTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| V43648Y04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
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