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參數(shù)資料
| 型號(hào)： | V43644Y04VCTG-75 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
| 中文描述： | 3.3伏4米× 64高性能PC133的無緩沖的SODIMM |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 128K |
| 代理商： | V43644Y04VCTG-75 |
8
V43644Y04V(C)TG-75 Rev. 1.3 October 2000
MOSEL VITELIC
V43644Y04V(C)TG-75
Notes:
1.
The specified values are valid when addresses are changed no more than once during t
CK
(min.) and when No
Operation commands are registered on every rising clock edge during t
RC
(min). Values are shown per module bank.
2.
The specified values are valid when data inputs (DQ’s) are stable during t
RC
(min.).
3.
All AC characteristics are shown for device level.
An initial pause of 100
μ
s is required after power-up, then a Precharge All Banks command must be given followed
by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin.
4.
AC timing tests have V
IL
= 0.4V and V
IH
= 2.4V with the timing referenced to the 1.4V crossover point. The transition
time is measured between V
IH
and V
IL
. All AC measurements assume t
T
= 1 ns with the AC output load circuit
shown. Specific tac and toh parameters are measured with a 50 pF only, without any resistive termination and with
a input signal of 1V / ns edge rate between 0.8V and 2.0V
Read Cycle
21
t
OH
Data Out Hold Time
2.7
–
ns
2
22
t
LZ
Data Out to Low Impedance Time
1
–
ns
23
t
HZ
Data Out to High Impedance Time
–
5.4
ns
7
24
t
DQZ
DQM Data Out Disable Latency
–
2
CLK
Write Cycle
25
t
WR
Write Recovery Time
1
–
CLK
26
t
DQW
DQM Write Mask Latency
0
–
CLK
AC Characteristics
T
A
= 0
°
to 70
°
C; V
SS
= 0V; V
CC
= 3.3V
±
0.3V, t
T
= 1 ns (Continued)
#
Symbol
Parameter
Limit Values
Unit
Note
-75
Min.
Max.
1.4V
1.4V
tSETUP
tHOLD
tAC
tAC
tLZ
tOH
tHZ
CLOCK
INPUT
OUTPUT
50 pF
I/O
Z=50 Ohm
+ 1.4 V
50 Ohm
2.4V
0.4V
t
T
tCL
tCH
I/O
Measurement conditions for
tac and toh
50 pF
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PDF描述 |
|---|---|
| V43644Y04VTG-10PC | 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43644YO4VTG | 3.3 Volt 4M x 64 High Performance 100 MHZ SDRAM Module with Unbuffered(3.3V 4M*64位高性能無緩沖器100MHZ SDRAM模塊) |
| V43648S04VCTG-10PC | 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43648S04VCTG-75 | 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| V43648S04VTG-10PC | 3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64位高性能無緩沖器PC100 SDRAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V43644Y04VTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43648S04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE |
| V43648S04VCTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE |
| V43648Y04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM |
| V43648Y04VCTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM |
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