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參數(shù)資料
| 型號： | V436616Y04VTG-75 |
| 英文描述： | x64 SDRAM Module |
| 中文描述： | X64的內(nèi)存模塊 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 64K |
| 代理商： | V436616Y04VTG-75 |
MOSEL VITELIC
V436616Y04VTG-75
9
V436616Y04VTG-75 Rev. 1.0 August 2000
5.
If clock rising time is longer than 1 ns, a time (t
T
/2 -0.5) ns has to be added to this parameter.
6.
Rated at 1.5V
7.
If t
T
is longer than 1 ns, a time (t
T
-1) ns has to be added to this parameter.
8.
Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be
given to “wake-up” the device.
9.
Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high.
Self Refresh Exit is not complete until a time period equal to t
RC
is satisfied once the Self Refresh Exit command
is registered.
10.
Referenced to the time which the output achieves the open circuit condition, not to output voltage levels.
11.
t
DAL
is equivalent to t
DPL
+ t
RP
.
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相關(guān)代理商/技術(shù)參數(shù) |
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| V436616Y04VTGL-75 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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