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參數(shù)資料
| 型號(hào)： | V4DJ132BLT |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 1M X 32 High Performance FPM Memory Module(1M*32高性能FPM存儲(chǔ)器模塊) |
| 中文描述： | 100萬(wàn)× 32高性能程序手冊(cè)內(nèi)存模組（100萬(wàn)* 32高性能程序手冊(cè)存儲(chǔ)器模塊） |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | V4DJ132BLT |
6
V4DJX132BLT/V4DJ132BLT Rev. 0.1 February
MOSEL V ITELIC
V4DJX132BLT/V4DJ132BLT
AC Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
#
Symbol
Parameter
V4DJX132BLT
Unit
Notes
50
60
Min. Max. Min. Max.
1
t
RAS
RAS Pulse Width
50
75K
60
75K
ns
2
t
RC
Read or Write Cycle Time
90
110
ns
3
t
RP
RAS Precharge Time
30
40
ns
4
t
CSH
CAS Hold Time
50
60
ns
5
t
CAS
CAS Pulse Width
9
15
ns
6
t
RCD
RAS to CAS Delay
19
36
20
45
ns
7
t
RCS
Read Command Setup Time
0
0
ns
4
8
t
ASR
Row Address Setup Time
0
0
ns
9
t
RAH
Row Address Hold Time
9
10
ns
10
t
ASC
Column Address Setup Time
0
0
ns
11
t
CAH
Column Address Hold Time
7
10
ns
12
t
RSH (R)
RAS Hold Time (Read Cycle)
15
15
ns
13
t
CRP
CAS to RAS Precharge Time
5
5
ns
14
t
RCH
Read Command Hold Time Referenced to CAS
0
0
ns
5
15
t
RRH
Read Command Hold Time Referenced to RAS
0
0
ns
5
16
t
CAC
Access Time from CAS (EDO)
14
15
ns
6, 7, 14
17
t
RAC
Access Time from RAS
50
60
ns
6, 8, 9
18
t
CAA
Access Time from Column Address
24
30
ns
6, 7, 10
19
t
LZ
CAS to Low-Z Output
0
0
ns
16
20
t
HZ
CAS to High-Z Output
0
8
0
10
ns
16
21
t
AR
Column Address Hold Time from RAS
40
50
ns
22
t
RAD
RAS to Column Address Delay Time
14
26
15
30
ns
11
23
t
RSH (W)
RAS or CAS Hold Time in Write Cycle
14
15
ns
24
t
CWL
Write Command to CAS Lead Time
14
15
ns
25
t
WCS
Write Command Setup Time
0
0
ns
12, 13
26
t
WCH
Write Command Hold Time
7
10
ns
27
t
WP
Write Pulse Width
7
10
ns
28
t
WCR
Write Command Hold Time from RAS
40
50
ns
29
t
RWL
Write Command to RAS Lead Time
14
15
ns
30
t
DS
Data in Setup Time
0
0
ns
14
31
t
DH
Data in Hold Time
7
10
ns
14
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