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參數(shù)資料
| 型號： | V53C516405AK50 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| 中文描述： | 內存| EDO公司| 4MX4 |的CMOS | SOJ | 26PIN |塑料 |
| 文件頁數(shù)： | 6/24頁 |
| 文件大?。?/td> | 170K |
| 代理商： | V53C516405AK50 |
6
V53C516405A Rev. 1.1 March 1998
MOSEL V ITELIC
V53C516405A
Write Cycle
31
t
WCH
Write command hold time
8
–
10
–
ns
32
t
WP
Write command pulse width
8
–
10
–
ns
33
t
WCS
Write command setup time
0
–
0
–
ns
15
34
t
RWL
Write command to RAS lead time
8
–
10
–
ns
35
t
CWL
Write command to CAS lead time
8
–
10
–
ns
36
t
DS
Data setup time
0
–
0
–
ns
16
37
t
DH
Data hold time
8
–
10
–
ns
16
Read-modify-Write Cycle
38
t
RWC
Read-write cycle time
113
–
138
–
ns
39
t
RWD
RAS to WE delay time
64
–
77
–
ns
15
40
t
CWD
CAS to WE delay time
27
–
32
–
ns
15
41
t
AWD
Column address to WE delay time
39
–
47
–
ns
15
42
t
OEH
OE command hold time
10
–
13
–
ns
EDO Page Mode Cycle
43
t
PC
EDO page mode cycle time
20
–
25
–
ns
44
t
CP
CAS precharge time
8
–
10
–
ns
45
t
CPA
Access time from CAS precharge
–
27
–
32
ns
7
46
t
COH
Output data hold time
5
–
5
–
ns
47
t
RASP
RAS pulse width in EDO mode
50
200k
60
200k
ns
48
t
RHPC
CAS precharge to RAS Delay
27
–
32
–
ns
49
t
OES
OE setup time prior to CAS
5
–
5
ns
EDO Page Mode Read-modify-Write Cycle
50
t
PRWC
EDO page mode read-write cycle time
58
–
68
–
ns
51
t
CPWD
CAS precharge to WE
41
–
49
–
ns
CAS-before-RAS Refresh Cycle
52
t
CSR
CAS setup time
10
–
10
–
ns
53
t
CHR
CAS hold time
10
–
10
–
ns
54
t
RPC
RAS to CAS precharge time
5
–
5
–
ns
55
t
WRP
Write to RAS precharge time
10
–
10
–
ns
56
t
WRH
Write hold time referenced to RAS
10
–
10
–
ns
AC Characteristics
(5, 6)
T
A
= 0 to 70 C,V
CC
= 5 V
±
10 %, t
T
= 2 ns
#
Symbol
Parameter
-50
-60
Unit
Note
min.
max.
min.
max.
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