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參數(shù)資料
| 型號： | V54C365164VB |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | High Performance PC100/125MHz 3.3 Volt 4M X 16 Synchronous DRAM(3.3V高性能PC100/125MHZ4Mx16同步動態(tài)RAM) |
| 中文描述： | 高性能PC100/125MHz 3.3伏4米× 16同步DRAM（3.3V的高性能PC100/125MHZ4Mx16同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 7/54頁 |
| 文件大?。?/td> | 458K |
| 代理商： | V54C365164VB |
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MOSEL V ITELIC
V54C365164VB
7
V54C365164VB Rev. 1.1 February 1999
Address Input for Mode Set (Mode Register Operation)
Similar to the page mode of conventional
DRAM’s, burst read or write accesses on any col-
umn address are possible once the RAS cycle
latches the sense amplifiers. The maximum t
the refresh interval time limits the number of random
column accesses. A new burst access can be done
even before the previous burst ends. The interrupt
operation at every clock cycles is supported. When
the previous burst is interrupted, the remaining ad-
dresses are overridden by the new address with the
full burst length. An interrupt which accompanies
RAS
or
with an operation change from a read to a write is
possible by exploiting DQM to avoid bus contention.
When two or more banks are activated
sequentially, interleaved bank read or write
operations are possible. With the programmed
burst length, alternate access and precharge
operations on two or more banks can realize fast
serial data access modes among many different
pages. Once two or more banks are activated,
column to column interleave operation can be done
between different pages.
A11
A3
A4
A2
A1
A0
A10 A9
A8
A7
A6
A5
Address Bus (Ax)
BT
Burst Length
CAS Latency
Mode Register
CAS Latency
A6
A5
A4
Latency
0
0
0
Reserve
0
0
1
Reserve
0
1
0
2
0
1
1
3
1
0
0
4
1
0
1
Reserve
1
1
0
Reserve
1
1
1
Reserve
Burst Length
A2
A1
A0
Length
Sequential
1
2
4
8
Reserve
Reserve
Reserve
Full Page
Interleave
1
2
4
8
Reserve
Reserve
Reserve
Reserve
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Burst
Type
A3
Type
0
Sequential
1
Interleave
Operation Mode
BA1 BA0 A11 A10 A9 A8 A7
Mode
0
0
0
0
0
0
0
Burst Read/Burst
Write
0
0
0
0
1
0
0
Burst Read/Single
Write
Operation Mode
BA0
BA1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V54C365164 | HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 |
| V54C365164VC | HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 |
| V54C365164VD | HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 |
| V54C365324V | 200/183/166/143 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 2M X 32 SDRAM 4 BANKS X 512Kbit X 32 |
| V54C365404VB | High Performance PC100/125MHz 3.3 Volt 16M X 4 Synchronous DRAM(3.3V高性能PC100/125MHz 16Mx4同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V54C365164VC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 |
| V54C365164VD | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 |
| V54C365324V | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:200/183/166/143 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 2M X 32 SDRAM 4 BANKS X 512Kbit X 32 |
| V54C365404VD | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4 |
| V54C365804VC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 |
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