參數(shù)資料
型號(hào)： V58C2256804SHUD6E
廠商： PROMOS TECHNOLOGIES INC
元件分類(lèi)： DRAM
英文描述： 32M X 8 DDR DRAM, PDSO66
封裝： 0.400 INCH, PLASTIC, MS-024FC, TSOP2-66
文件頁(yè)數(shù)： 20/60頁(yè)
文件大?。?/td> 1125K
代理商： V58C2256804SHUD6E
27
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SH
V58C2256(804/404/164)SH Rev. 1.1 July 2010
TRUTH TABLE 2 – CKE
(Notes: 1-4)
NOTE:
1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4. All states and sequences not shown are illegal or reserved.
5. DESELECT or NOP commands should be issued on any clock edges occurring during the tXSR period.
A minimum of 200 clock cycles is needed before applying a read command, for the DLL to lock.
CKEn-1 CKEn
CURRENT STATE
COMMANDn
ACTIONn
NOTES
LL
Power-Down
X
Maintain Power-Down
Self Refresh
X
Maintain Self Refresh
LH
Power-Down
DESELECT or NOP
Exit Power-Down
Self Refresh
DESELECT or NOP
Exit Self Refresh
5
HL
All Banks Idle
DESELECT or NOP
Precharge Power-Down Entry
Bank(s) Active
DESELECT or NOP
Active Power-Down Entry
All Banks Idle
AUTO REFRESH
Self Refresh Entry
H
See Truth Table 3
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