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參數(shù)資料
| 型號(hào)： | V59C1G01804QALF25A |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM, PBGA68 |
| 封裝： | ROHS COMPLIANT, FBGA-68 |
| 文件頁(yè)數(shù)： | 10/79頁(yè) |
| 文件大?。?/td> | 1028K |
| 代理商： | V59C1G01804QALF25A |
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18
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
ODT (on-die termination)
On Die Termination (ODT) is a feature that allows a DRAM to turn on/off termination resistance for each DQ,
DQS/DQS, RDQS/RDQS, and DM signal for x4/x8 configurations via the ODT control pin. For x16 configuration
ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal via the ODT control pin. The
ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to
independently turn on/off termination resistance for any or all DRAM devices.
The ODT function is supported for ACTIVE and STANDBY modes. ODT is turned off and not supported in SELF
REFRESH mode.
Input
Pin
Input
Buffer
DRAM
VSSQVSSQ
VDDQVDDQ
Rval2
Rval1
sw1
sw2
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR.
Termination included on all DQs, DM, DQS, DQS, RDQS, and RDQS pins.
Switch (sw1, sw2, sw3) is enabled by ODT pin.
VSSQ
VDDQ
Rval3
sw3
Functional representation of ODT
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