參數(shù)資料
型號(hào): V62C21164096L-85T
廠商: Mosel Vitelic, Corp.
英文描述: 256K x 16, 0.20 um CMOS STATIC RAM
中文描述: 256K × 16,0.20微米的CMOS靜態(tài)RAM
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 86K
代理商: V62C21164096L-85T
6
V62C21164096 Rev. 1.6 October 2001
MOSEL VITELIC
V62C21164096
AC Electrical Characteristics
(over all temperature ranges)
Read Cycle
Write Cycle
Parameter
Name
Parameter
70
85
Unit
Min.
Max.
Min.
Max.
t
RC
Read Cycle Time
70
85
ns
t
AA
Address Access Time
70
85
ns
t
ACS
Chip Enable Access Time
70
85
ns
t
BA
UBE, LBE Access Time
70
85
ns
t
OE
Output Enable to Output Valid
35
35
ns
t
CLZ
Chip Enable to Output in Low Z
10
10
ns
t
BLZ
UBE, LBE to Output in Low Z
10
10
ns
t
OLZ
Output Enable to Output in Low Z
5
10
ns
t
CHZ
Chip Disable to Output in High Z
0
25
0
30
ns
t
OHZ
Output Disable to Output in High Z
0
25
0
30
ns
t
BHZ
UBE, LBE to Output in High Z
0
25
0
30
ns
t
OH
Output Hold from Address Change
5
10
ns
Parameter
Name
Parameter
70
85
Unit
Min.
Max.
Min.
Max.
t
WC
Write Cycle Time
70
85
ns
t
CW
Chip Enable to End of Write
60
70
ns
t
AS
Address Setup Time
0
0
ns
t
AW
Address Valid to End of Write
60
70
ns
t
WP
Write Pulse Width
50
60
ns
t
WR
Write Recovery Time
0
0
ns
t
WHZ
Write to Output High-Z
0
20
0
25
ns
t
DW
Data Setup to End of Write
35
40
ns
t
DH
Data Hold from End of Write
0
0
ns
t
BW
UBE, LBE to End of Write
60
70
ns
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