Handling Procedures
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond specified
operating conditions may affect device reliability or cause
malfunction.
2
Absolute Maximum Ratings
Table 1
Parameter
Voltage at V
Min. voltage at RES or RES
Max. voltage at RES or RES
Storage temperature range
to V
DD
SS
V
DD
V
min
V
max
T
STO
-0.3V to+10 V
V
- 0.3 V
SS
V
+ 0.3 V
DD
-65 to +150
O
C
Symbol
Conditions
This device has built-in protection against high static voltages
or electric fields; however, anti-static precautions must be taken
as for any other CMOS component. Unless otherwise specified,
proper operation can only occur when all terminal voltages are
kept within the supply voltage range.
Operating Conditions
1)
The maximum operating temperature is confirmed by
sampling at initial device qualification.
T
A
V
DD
-40
1
+125
8
O
C
V
Table 2
Parameter
Operating temperature
Positive supply voltage
Symbol Min.
Typ. Max. Units
1)
Electrical Characteristics
T = -40 to +85 C, unless otherwise specified
O
1)
RES or RES open
2)
Only for Open drain versions
I
DD
I
DD
I
DD
V
THlow
V
THlow
V
THlow
V
THlow
V
THlow
V
THlow
V
THhigh
V
HYS
V
OL
V
OL
V
OL
V
OH
V
OH
V
OH
I
LEAK
V
V
V
Version: A,G,M
Version: B,H,N
Version: C,I,O
Version: D,J,P
Version: E,K,Q
Version: FL,R
= 2 V
DD
= 5 V
DD
= 8 V
DD
V
V
V
V
V
V
= 5 V, I = 8 mA
DD
= 3 V, I = 4 mA
DD
= 1 V, I = 50
m
A
DD
= 5 V, I
DD
OH
= 3 V, I
DD
OH
= 1 V, I
DD
OH
V
= 5.5 V
DD
1)
Supply current
Threshold Low Voltage
Threshold hysteresis
RES Output Low Level
RES Output High Level
2)
Output leakage current
m
A
m
A
m
A
V
V
V
V
V
V
V
mV
mV
mV
mV
V
V
mV
m
A
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Max.
at 25
O
C
Min.
at 25
O
C
= -8 mA
= -4 mA
= -100
m
A
1.77
2.09
2.48
3.11
3.55
4.05
5.58
4.3
2.3
850
1.84
2.18
2.59
3.23
3.70
4.22
5.79
1.5
3.0
5.2
1.95
2.32
2.73
3.42
3.88
4.42
6.10
25
175
140
20
4.5
2.6
950
0.05
2.1
3.9
6.8
2.04
2.41
2.86
3.59
4.08
4.67
6.42
3.1
5.7
10.0
2.17
2.55
3.03
3.80
4.32
4.95
6.82
400
300
90
1
Table 3
Threshold High Voltage
Timing Characteristics
V
= 5.0 V, T = -40 to +85 C, unless otherwise specified
DD
t
POR
t
SEN high
t
SEN low
T
Rhigh
for V
for V
for V
for V
= 5 V to 7 V in 5
m
s
DD
= 5 V to 3 V in 5
m
s
DD
= 5 V to 7 V in 5
m
s
DD
= 5 V to 3 V in 5
m
s
DD
25
18
20
20
22
Power on reset time
Sensitivity around V
Sensitivity around V
THhigh
ms
m
s
m
s
m
s
m
s
Table 4
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Reaction time around V
Reaction time around V
THlow
THhigh
3)
Tested on versions with V
higher than 3 V
THlow
50
0.8 t
Rhigh
0.8 t
Rlow
55
75
75
90
150
3)
THlow
3)
T
Rlow
V6310
R