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參數(shù)資料
| 型號(hào)： | V826632B24S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| 中文描述： | 256 MB的200 - pin的DDR SODIMM內(nèi)存緩沖2.5伏32M的× 64 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 217K |
| 代理商： | V826632B24S |
MOSEL VITELIC
V826632B24S
9
V826632B24S Rev. 1.1 July 2002
DDR SDRAM I
DD
SPEC TABLE
* Module I
DD
was calculated on the basis of component I
DD
and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
IDD1 : Operating current: One bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Symbol
C0(DDR333@CL=2.5)
B1(DDR266@CL=2)
B0(DDR266@CL=2.5)
A1(DDR200@CL=2)
Unit
Notes
IDD0
590
560
560
460
mA
IDD1
730
650
650
585
mA
IDD2P
24
24
24
24
mA
IDD2F
210
160
160
150
mA
IDD2Q
165
150
150
130
mA
IDD3P
285
245
245
210
mA
IDD3N
450
370
370
330
mA
IDD4R
1030
870
870
770
mA
IDD4W
985
820
820
690
mA
IDD5
950
850
850
760
mA
IDD6
Normal
24
24
24
24
mA
Low power
15
15
15
15
mA
Optional
IDD7A
1640
1380
1380
1200
mA
相關(guān)PDF資料 |
PDF描述 |
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| V826632G24S | 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| V826664G24S | 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V827316K04S | 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826632G24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| V826632K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826664G24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V826664K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
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